Thermal stress analysis on high power LED package

Abstract

Light emitting diode (LED) technology has grown significantly over the decades. LED has more advantage over conventional lighting source and offers wide variety of application. High powered LED packages are much complex and compact build. With that there are many factor of reliability which will cause failures. One of the factor is thermal stress induced in the package. To be more precise the stress induced in the LED die chip where the light is emitted. High thermal stress typically results in LED life span degradation. High power LED package that been adopted for the analysis is IR Synios. The analysis is to study the thermal stress induced in the LED die bond. Analysis of thermal stress is simulated through ANSYS. Simulation is done for the package with different bond line thickness (BLT), die thickness, die size and trench type. Different  results has been obtained based on different characteristics of the DIE chip.