Single photon indium phosphide on silicon chip for autonomous wireless sensor FMCW -LiDAR


  • selvakumar.R , K.venkatalakshmi


Text Single Photon (SP) driven silicon chip for autonomous System (AS) are the present era in automation sector. We proposed an Indium Phosphide (InP) material composite design and optimization to improve the photon mobility, conductivity and frequency. Material used for fabrication of autonomous system performance is directly propositional in the following factors:  thermal stability in various refractive index (nD) The proposed material InP integrated with the white phosphorus reaction with indium iodide at 400 ?C, it induces the direct band gap 0.9366 eV (300 and speed of electron moments scattered in all the areas. To make it intense path instead of electron we introduced single photon indium phosphide (SPInP) on silicon chip (SoC) adding with photonic integrated circuits (PICs). In this method wavelength sensitivity improved single to three pulse range various from 905  nm to 1550 nm compound attenuation reaches to 0.36666 dB/Km. Signal and detection and conversion SPInP  SoC more suitably in Frequency Modulated Continuous Wave (FMCW) integrated with Indium Phosphide photomultipliers (InPPMs) for fabrication of LiDAR. In this work we have done parameter analysis, optimized calculation of Signal to Noise Ratio (SNR) , Peak to Average Power ratio (PAPR), Angle of Arrival (AoA), Distance, velocity, error detection in frequency domain and simulation desired characteristics are presented.