Resistive Random Access Memory (RRAM) based Unbalanced Ternary Inverter


  • Furqan Zahoor, Fawnizu Azmadi Hussin , Tun Zainal Azni Zulkifli , Farooq Ahmad Khanday , Usman Bature Isyaku , And Aabid Amin Fida


In this manuscript, resistive random access memory (RRAM) based ternary logic inverter
design is presented. Ternary logic has emerged as a standout technology compared to the traditional
binary logic systems as it has significant advantages in terms of operating speed, reduced circuit
overheads and enhanced information density. The resistive load metal oxide semiconductor field effect
transistor (MOSFET) based ternary inverter and resistive load carbon nanotube field effect transistor
(CNTFET) based ternary inverter circuits have been previously proposed. The proposed design utilizes
RRAM as the active load in the design thus eliminating the requirement of large resistors. The proposed
ternary logic inverter shows advantages of reduced chip area and robustness to the process variations. The
simulation of the proposed STI design is carried out utilising HSPICE software, and the functional
validation of ternary logic inverter circuit is confirmed by the simulation results.