Carrier Dynamics in Gallium Arsenide for a Metal-Oxide Semiconductor Field Effect Transistor

Abstract

Carrier dynamics in gallium arsenide (GaAs) material to model a metal-oxide semiconductor field effect transistor (MOSFET) have been investigated by computer-based simulation method. The diffraction efficiency, carrier lifetime, electrical decay time and potential of material are considered in the model. Gallium arsenide is used as a target semiconductor material. The numerical simulation is implemented by using mathematical derivations to create an analytical MOSFET model based on electronic characteristics and carrier dynamics. An analytical simulation based compact model of the device determines the conditions of photon excitation energy for MOSFET. The states of carrier lifetime are investigated by the electronic characteristics based on carrier transport mechanisms. The design of GaAs-based MOSFET could be observed in this paper.