Analysis on the Influence of Varying Etching Parameters for the Synthesis of Perforated Si Nano Structures

Abstract

Silicon (Si) nano structures have been a vital component in the current semiconductor technology because of its narrow band gap with tunable physical properties, which makes them ideal for sensor technology and microelectronics applications. Among these nano structures perforated Si structures such as, porous and pillars geometries are extensively studied and utilized. In this study, perforated Si nano structures with different morphologies have been fabricated using a single step electrochemical etching method by varying the fabrication parameters. It has been understood that the parameters such as etching time and solution composition have great influence on the morphological characteristics. Development of these perforated structures on the basis of these fabrication parameters and the possible reaction mechanism are explained in detail.