A unique empirical nonlinear DC I-V GaN HEMT model

Abstract

A new empirical model, obtained by modifying the look-up table based model, is presented for the currentvoltage (I-V) characteristics of AlGaN/GaN high electron-mobility transistors (HEMTs). This model is
capable of describing the continuity of various derivatives like first order, second order, third order, etc.
of drain source current (Ids) with respect to gate source voltage (Vgs) and drain source voltage (Vds)
respectively. The model accurately predicts the Vgs and Vds dependence of first function or scale factor of
Ids. The proposed empirical model incorporates the effects of traps, self-heating, virtual gating, drain
induced barrier lowering and bias dependence of access region ON resistance. Excellent matching of
modeled and measured drain current and trans-conductance with respect to Vgs for multiple drain biases
is demonstrated.