Characterization of Organic and Inorganic Dielectric Thin Films in the fabrication of P3HT based Organic Field Effect Transistors

Abstract

Organic and inorganic materials make a faster and fine integration of many properties within a
single composite. In this present work, organic electronics is used as the recent archetype which is one of the
most stimulating technologies that are absolutely rooted on carbon. An organic field effect transistor
(OFETs) is a promising application of organic electronics that assures flexible design with low cost of
fabrication. The OFET is fabricated using Poly (3-hexylthiophene) or P3HT which is a ?-conjugated organic
semiconducting polymer. As the dielectric materials play a significant role in the fabrication of OFET
devices, the incorporation of a different gate dielectrics is also significant. In this paper, the individual thin
film characteristics of two dielectric materials, Polymethylmethacrylate (PMMA) and Silicon dioxide (SiO2)
and their effect on two different P3HT based OFETs, are examined. Many distinctive structural and optical
characteristics of the dielectric layers have been detected to provide evidence for the OFETs to be used as a
photodetector.